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Title:
simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model
Author: Xia Chang Sheng ; Simon Li Z.M. ; Sheng Yang ; Cheng Li Wen ; Hu Wei Da ; Lu Wei
Keyword: Light emitting diodes ; Models
Source: Optical and Quantum Electronics
Issued Date: 2012
Pages: 1-8
Indexed Type: EI
Department: (1) Crosslight Software Inc. China Branch Suite 906 Building JieDi 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
Abstract: Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices. © 2012 Springer Science+Business Media New York.
English Abstract: Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices. © 2012 Springer Science+Business Media New York.
Language: 英语
Content Type: 期刊论文
URI: http://ir.iscas.ac.cn/handle/311060/15403
Appears in Collections:软件所图书馆_期刊论文

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Recommended Citation:
Xia Chang Sheng,Simon Li Z.M.,Sheng Yang,et al. simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model[J]. Optical and Quantum Electronics,2012-01-01:1-8.
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