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Title:
molecular dynamics simulation of hydrogenated carbon film growth from ch radicals
Author: Quan W.L. ; Sun X.W. ; Song Q. ; Fu Z.J. ; Guo P. ; Tian J.H. ; Chen J.M.
Keyword: Deposits ; Film growth ; Hydrogenation ; Molecular dynamics ; Molecular mechanics
Source: Applied Surface Science
Issued Date: 2012
Volume: 263, Pages:339-344
Indexed Type: EI
Department: (1) School of Mathematics Physics and Software Engineering Lanzhou Jiaotong University Lanzhou 730070 China; (2) School of Electrical and Electronic Engineering Chongqing University of Arts and Sciences Chongqing 402160 China; (3) State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou 730000 China
Abstract: The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V.
English Abstract: The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V.
Language: 英语
Content Type: 期刊论文
URI: http://ir.iscas.ac.cn/handle/311060/15405
Appears in Collections:软件所图书馆_期刊论文

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Recommended Citation:
Quan W.L.,Sun X.W.,Song Q.,et al. molecular dynamics simulation of hydrogenated carbon film growth from ch radicals[J]. Applied Surface Science,2012-01-01,263:339-344.
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