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Title:
optimal number of quantum wells for blue ingan/gan light-emitting diodes
Author: Xia Chang Sheng ; Simon Li Z.M. ; Li Z.Q. ; Sheng Yang ; Zhang Zhi Hua ; Lu Wei ; Cheng Li Wen
Keyword: Conversion efficiency ; Optimization ; Semiconductor quantum wells
Source: Applied Physics Letters
Issued Date: 2012
Volume: 100, Issue:26, Pages:-
Indexed Type: EI
Department: (1) Crosslight Software Inc. China Branch Building JieDi 2790 Zhongshan Bei Road Shanghai 200063 China; (2) Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology Tongji University Shanghai 200092 China; (3) National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
Abstract: Blue InGaN/GaN light-emitting diodes with different numbers of quantum wells (QWs) are numerically investigated. With increase of QW number, the output power and forward voltage are both increased consistently. In terms of power conversion efficiency, the optimal number of QWs increases with the increase of injection currents and is twelve at experimental current of 42 A/cm2. Simulation results show that the bias voltage in QW plane is reduced with increase of QW number. This effect improves the current spreading and uniformity of carrier distribution in QW plane which results in the reduction of electron leakage and enhancement of emission efficiency. © 2012 American Institute of Physics.
English Abstract: Blue InGaN/GaN light-emitting diodes with different numbers of quantum wells (QWs) are numerically investigated. With increase of QW number, the output power and forward voltage are both increased consistently. In terms of power conversion efficiency, the optimal number of QWs increases with the increase of injection currents and is twelve at experimental current of 42 A/cm2. Simulation results show that the bias voltage in QW plane is reduced with increase of QW number. This effect improves the current spreading and uniformity of carrier distribution in QW plane which results in the reduction of electron leakage and enhancement of emission efficiency. © 2012 American Institute of Physics.
Language: 英语
Content Type: 期刊论文
URI: http://ir.iscas.ac.cn/handle/311060/15460
Appears in Collections:软件所图书馆_期刊论文

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Recommended Citation:
Xia Chang Sheng,Simon Li Z.M.,Li Z.Q.,et al. optimal number of quantum wells for blue ingan/gan light-emitting diodes[J]. Applied Physics Letters,2012-01-01,100(26):-.
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