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Title:
simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model
Author: Xia Chang Sheng ; Simon Li Z.M. ; Sheng Yang ; Cheng Li Wen ; Da Hu Wei ; Lu Wei
Source: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Conference Name: 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
Conference Date: August 28, 2012 - August 31, 2012
Issued Date: 2012
Conference Place: Shanghai, China
Keyword: Computer simulation ; Light emitting diodes ; Models ; Optoelectronic devices
Indexed Type: EI
ISSN: 2158-3234
ISBN: 9781467316040
Department: (1) Crosslight Software Inc. China Branch 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
Abstract: Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.
English Abstract: Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.
Language: 英语
Content Type: 会议论文
URI: http://ir.iscas.ac.cn/handle/311060/15941
Appears in Collections:软件所图书馆_会议论文

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Recommended Citation:
Xia Chang Sheng,Simon Li Z.M.,Sheng Yang,et al. simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012.
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