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Title:
simulation of ingan/gan light-emitting diodes with patterned sapphire substrate
Author: Sheng Yang ; Xia Chang Sheng ; Simon Li Z.M. ; Cheng Li Wen
Source: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Conference Name: 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
Conference Date: August 28, 2012 - August 31, 2012
Issued Date: 2012
Conference Place: Shanghai, China
Keyword: Computer simulation ; Efficiency ; Extraction ; Finite difference time domain method ; Gallium nitride ; Optoelectronic devices ; Sapphire ; Semiconductor quantum wells ; Three dimensional computer graphics ; Time domain analysis
Indexed Type: EI
ISSN: 2158-3234
ISBN: 9781467316040
Department: (1) Crosslight Software Inc. China Branch 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
Abstract: Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.
English Abstract: Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.
Language: 英语
Content Type: 会议论文
URI: http://ir.iscas.ac.cn/handle/311060/15947
Appears in Collections:软件所图书馆_会议论文

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Recommended Citation:
Sheng Yang,Xia Chang Sheng,Simon Li Z.M.,et al. simulation of ingan/gan light-emitting diodes with patterned sapphire substrate[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012.
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