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| molecular dynamics simulation of hydrogenated carbon film growth from ch radicals | |
| Quan W.L.; Sun X.W.; Song Q.; Fu Z.J.; Guo P.; Tian J.H.; Chen J.M. | |
| 2012 | |
| Source | Applied Surface Science
 |
| ISSN | 0169-4332 |
| Volume | 263Pages:339-344 |
| English Abstract | The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V.; The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V. |
| Indexed Type | EI |
| Keyword | Deposits Film Growth Hydrogenation Molecular Dynamics Molecular Mechanics |
| Department | (1) School of Mathematics Physics and Software Engineering Lanzhou Jiaotong University Lanzhou 730070 China; (2) School of Electrical and Electronic Engineering Chongqing University of Arts and Sciences Chongqing 402160 China; (3) State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou 730000 China |
| Language | 英语 |
| Content Type | 期刊论文 |
| URI | http://ir.iscas.ac.cn/handle/311060/15405 |
| Collection | 中国科学院软件研究所 |
| Recommended Citation GB/T 7714 | Quan W.L.,Sun X.W.,Song Q.,et al. molecular dynamics simulation of hydrogenated carbon film growth from ch radicals[J]. Applied Surface Science,2012,263:339-344. |
| APA | Quan W.L..,Sun X.W..,Song Q..,Fu Z.J..,Guo P..,...&Chen J.M..(2012).molecular dynamics simulation of hydrogenated carbon film growth from ch radicals.Applied Surface Science,263,339-344. |
| MLA | Quan W.L.,et al."molecular dynamics simulation of hydrogenated carbon film growth from ch radicals".Applied Surface Science 263(2012):339-344. |
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