molecular dynamics simulation of hydrogenated carbon film growth from ch radicals

ISCAS OpenIR

	molecular dynamics simulation of hydrogenated carbon film growth from ch radicals
	Quan W.L.; Sun X.W.; Song Q.; Fu Z.J.; Guo P.; Tian J.H.; Chen J.M.
	2012
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	263 页码:339-344
摘要	The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp³-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V.; The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp³-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V.
收录类别	EI
关键词	Deposits Film Growth Hydrogenation Molecular Dynamics Molecular Mechanics
部门归属	(1) School of Mathematics Physics and Software Engineering Lanzhou Jiaotong University Lanzhou 730070 China; (2) School of Electrical and Electronic Engineering Chongqing University of Arts and Sciences Chongqing 402160 China; (3) State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou 730000 China
语种	英语
内容类型	期刊论文
URI标识	http://ir.iscas.ac.cn/handle/311060/15405
专题	中国科学院软件研究所
推荐引用方式 GB/T 7714	Quan W.L.,Sun X.W.,Song Q.,et al. molecular dynamics simulation of hydrogenated carbon film growth from ch radicals[J]. Applied Surface Science,2012,263:339-344.
APA	Quan W.L..,Sun X.W..,Song Q..,Fu Z.J..,Guo P..,...&Chen J.M..(2012).molecular dynamics simulation of hydrogenated carbon film growth from ch radicals.Applied Surface Science,263,339-344.
MLA	Quan W.L.,et al."molecular dynamics simulation of hydrogenated carbon film growth from ch radicals".Applied Surface Science 263(2012):339-344.