optimal number of quantum wells for blue ingan/gan light-emitting diodes

ISCAS OpenIR

	optimal number of quantum wells for blue ingan/gan light-emitting diodes
	Xia Chang Sheng; Simon Li Z.M.; Li Z.Q.; Sheng Yang; Zhang Zhi Hua; Lu Wei; Cheng Li Wen
	2012
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	100 期号:26 页码:-
摘要	Blue InGaN/GaN light-emitting diodes with different numbers of quantum wells (QWs) are numerically investigated. With increase of QW number, the output power and forward voltage are both increased consistently. In terms of power conversion efficiency, the optimal number of QWs increases with the increase of injection currents and is twelve at experimental current of 42 A/cm². Simulation results show that the bias voltage in QW plane is reduced with increase of QW number. This effect improves the current spreading and uniformity of carrier distribution in QW plane which results in the reduction of electron leakage and enhancement of emission efficiency. © 2012 American Institute of Physics.; Blue InGaN/GaN light-emitting diodes with different numbers of quantum wells (QWs) are numerically investigated. With increase of QW number, the output power and forward voltage are both increased consistently. In terms of power conversion efficiency, the optimal number of QWs increases with the increase of injection currents and is twelve at experimental current of 42 A/cm². Simulation results show that the bias voltage in QW plane is reduced with increase of QW number. This effect improves the current spreading and uniformity of carrier distribution in QW plane which results in the reduction of electron leakage and enhancement of emission efficiency. © 2012 American Institute of Physics.
收录类别	EI
关键词	Conversion Efficiency Optimization Semiconductor Quantum Wells
部门归属	(1) Crosslight Software Inc. China Branch Building JieDi 2790 Zhongshan Bei Road Shanghai 200063 China; (2) Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology Tongji University Shanghai 200092 China; (3) National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
语种	英语
内容类型	期刊论文
URI标识	http://ir.iscas.ac.cn/handle/311060/15460
专题	中国科学院软件研究所
推荐引用方式 GB/T 7714	Xia Chang Sheng,Simon Li Z.M.,Li Z.Q.,et al. optimal number of quantum wells for blue ingan/gan light-emitting diodes[J]. Applied Physics Letters,2012,100(26):-.
APA	Xia Chang Sheng.,Simon Li Z.M..,Li Z.Q..,Sheng Yang.,Zhang Zhi Hua.,...&Cheng Li Wen.(2012).optimal number of quantum wells for blue ingan/gan light-emitting diodes.Applied Physics Letters,100(26),-.
MLA	Xia Chang Sheng,et al."optimal number of quantum wells for blue ingan/gan light-emitting diodes".Applied Physics Letters 100.26(2012):-.