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simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model
Xia Chang Sheng; Simon Li Z.M.; Sheng Yang; Cheng Li Wen; Da Hu Wei; Lu Wei
2012
Conference Name12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
SourceProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Pages21-22
Conference DateAugust 28, 2012 - August 31, 2012
Conference PlaceShanghai, China
Indexed TypeEI
ISSN2158-3234
ISBN9781467316040
Department(1) Crosslight Software Inc. China Branch 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
English AbstractBlue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.; Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.
KeywordComputer Simulation Light Emitting Diodes Models Optoelectronic Devices
Language英语
Content Type会议论文
URIhttp://ir.iscas.ac.cn/handle/311060/15941
Collection中国科学院软件研究所
Recommended Citation
GB/T 7714
Xia Chang Sheng,Simon Li Z.M.,Sheng Yang,et al. simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model[C],2012:21-22.
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