simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model

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	simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model
	Xia Chang Sheng; Simon Li Z.M.; Sheng Yang; Cheng Li Wen; Da Hu Wei; Lu Wei
	2012
会议名称	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
会议录名称	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
页码	21-22
会议日期	August 28, 2012 - August 31, 2012
会议地点	Shanghai, China
收录类别	EI
ISSN	2158-3234
ISBN	9781467316040
部门归属	(1) Crosslight Software Inc. China Branch 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
摘要	Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.; Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.
关键词	Computer Simulation Light Emitting Diodes Models Optoelectronic Devices
语种	英语
内容类型	会议论文
URI标识	http://ir.iscas.ac.cn/handle/311060/15941
专题	中国科学院软件研究所
推荐引用方式 GB/T 7714	Xia Chang Sheng,Simon Li Z.M.,Sheng Yang,et al. simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model[C],2012:21-22.