simulation of ingan/gan light-emitting diodes with patterned sapphire substrate

ISCAS OpenIR

	simulation of ingan/gan light-emitting diodes with patterned sapphire substrate
	Sheng Yang; Xia Chang Sheng; Simon Li Z.M.; Cheng Li Wen
	2012
会议名称	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
会议录名称	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
页码	23-24
会议日期	August 28, 2012 - August 31, 2012
会议地点	Shanghai, China
收录类别	EI
ISSN	2158-3234
ISBN	9781467316040
部门归属	(1) Crosslight Software Inc. China Branch 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
摘要	Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.; Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.
关键词	Computer Simulation Efficiency Extraction Finite Difference Time Domain Method Gallium Nitride Optoelectronic Devices Sapphire Semiconductor Quantum Wells Three Dimensional Computer Graphics Time Domain Analysis
语种	英语
内容类型	会议论文
URI标识	http://ir.iscas.ac.cn/handle/311060/15947
专题	中国科学院软件研究所
推荐引用方式 GB/T 7714	Sheng Yang,Xia Chang Sheng,Simon Li Z.M.,et al. simulation of ingan/gan light-emitting diodes with patterned sapphire substrate[C],2012:23-24.