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| simulation of ingan/gan light-emitting diodes with patterned sapphire substrate | |
| Sheng Yang; Xia Chang Sheng; Simon Li Z.M.; Cheng Li Wen | |
| 2012 | |
| Conference Name | 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 |
| Source | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD |
| Pages | 23-24 |
| Conference Date | August 28, 2012 - August 31, 2012 |
| Conference Place | Shanghai, China |
| Indexed Type | EI |
| ISSN | 2158-3234 |
| ISBN | 9781467316040 |
| Department | (1) Crosslight Software Inc. China Branch 2790 Zhongshan Bei Road Shanghai 200063 China; (2) National Lab for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China |
| English Abstract | Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE.; Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE. |
| Keyword | Computer Simulation Efficiency Extraction Finite Difference Time Domain Method Gallium Nitride Optoelectronic Devices Sapphire Semiconductor Quantum Wells Three Dimensional Computer Graphics Time Domain Analysis |
| Language | 英语 |
| Content Type | 会议论文 |
| URI | http://ir.iscas.ac.cn/handle/311060/15947 |
| Collection | 中国科学院软件研究所 |
| Recommended Citation GB/T 7714 | Sheng Yang,Xia Chang Sheng,Simon Li Z.M.,et al. simulation of ingan/gan light-emitting diodes with patterned sapphire substrate[C],2012:23-24. |
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