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| a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package | |
| Cheng Liwen; Sheng Yang; Chang Shengxia; Hu Weida; Lu Wei | |
| 2012 | |
| Conference Name | 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 |
| Source | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD |
| Pages | 51-52 |
| Conference Date | August 28, 2012 - August 31, 2012 |
| Conference Place | Shanghai, China |
| Indexed Type | EI |
| ISSN | 2158-3234 |
| ISBN | 9781467316040 |
| Department | (1) National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science 500 Yu Tian Road Shanghai 200083 China; (2) Crosslight Software China Building JieDi 2790 Zhongshan Bei Road Shanghai 200063 China |
| English Abstract | The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE.; The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE. |
| Keyword | Computer Simulation Gallium Alloys Gallium Nitride Heat Transfer Optoelectronic Devices Transient Analysis |
| Language | 英语 |
| Content Type | 会议论文 |
| URI | http://ir.iscas.ac.cn/handle/311060/15963 |
| Collection | 中国科学院软件研究所 |
| Recommended Citation GB/T 7714 | Cheng Liwen,Sheng Yang,Chang Shengxia,et al. a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package[C],2012:51-52. |
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