a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package

ISCAS OpenIR

	a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package
	Cheng Liwen; Sheng Yang; Chang Shengxia; Hu Weida; Lu Wei
	2012
会议名称	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
会议录名称	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
页码	51-52
会议日期	August 28, 2012 - August 31, 2012
会议地点	Shanghai, China
收录类别	EI
ISSN	2158-3234
ISBN	9781467316040
部门归属	(1) National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science 500 Yu Tian Road Shanghai 200083 China; (2) Crosslight Software China Building JieDi 2790 Zhongshan Bei Road Shanghai 200063 China
摘要	The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE.; The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE.
关键词	Computer Simulation Gallium Alloys Gallium Nitride Heat Transfer Optoelectronic Devices Transient Analysis
语种	英语
内容类型	会议论文
URI标识	http://ir.iscas.ac.cn/handle/311060/15963
专题	中国科学院软件研究所
推荐引用方式 GB/T 7714	Cheng Liwen,Sheng Yang,Chang Shengxia,et al. a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package[C],2012:51-52.