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releasing control policy for semiconductor wafer fabrication based on fuzzy petri nets-reasoning
Cao Zheng-Cai; Zhao Hui-Dan; Wang Yong-Ji
2011
SourceTien Tzu Hsueh Pao/Acta Electronica Sinica
ISSN3722112
Volume39Issue:7Pages:1545-1550
English AbstractBecause of large amount of stochastic and uncertain factors in semiconductor wafer fabrication (SWF), we often meet with all kinds of disruptions which make the former optimal scheduling scheme lose superiority. Considering the advantage of the fuzzy Petri-net (FPN) on the knowledge expression and logical reasoning, a releasing control policy for SWF based on FPN is proposed. According to the releasing FPN -reasoning model and the real-time data collected from the line, the control method can help to take the feasible releasing action to adopted to different conditions. With the releasing strategy, the throughput of the wafer fabrication can be maximized and the system can be optimized to a large extent. Finally, the effectiveness of this proposed method is confirmed by simulation.
Indexed TypeEI
KeywordFabrication Fuzzy Systems Optimization Petri Nets
Department(1) College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, China; (2) State Key Laboratory of Computer Science, Institute of Software, Chinese Acad. of Sci., Beijing 100080, China
Language中文
Content Type期刊论文
URIhttp://ir.iscas.ac.cn/handle/311060/13889
Collection互联网软件技术实验室
Recommended Citation
GB/T 7714
Cao Zheng-Cai,Zhao Hui-Dan,Wang Yong-Ji. releasing control policy for semiconductor wafer fabrication based on fuzzy petri nets-reasoning[J]. Tien Tzu Hsueh Pao/Acta Electronica Sinica,2011,39(7):1545-1550.
APA Cao Zheng-Cai,Zhao Hui-Dan,&Wang Yong-Ji.(2011).releasing control policy for semiconductor wafer fabrication based on fuzzy petri nets-reasoning.Tien Tzu Hsueh Pao/Acta Electronica Sinica,39(7),1545-1550.
MLA Cao Zheng-Cai,et al."releasing control policy for semiconductor wafer fabrication based on fuzzy petri nets-reasoning".Tien Tzu Hsueh Pao/Acta Electronica Sinica 39.7(2011):1545-1550.
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